Reactive solid-state dewetting of Cu–Ni films on silicon
Raphael Clearfield1,
Justin G. Railsback1,
Ryan C. Pearce1,2,
Dale K. Hensley3,
Jason D. Fowlkes3,
Miguel Fuentes-Cabrera3,
Michael L. Simpson2,3,
Philip D. Rack2,3,
and
Anatoli V. Melechko1
1Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
2Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
3Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
(Received 25 August 2010; accepted 22 November 2010; published online 20 December 2010)
The behavior of a 50 nm Cu–Ni alloy film on
Si in a process of reactive solid-state dewetting is presented. The
films were annealed at a range of temperatures (300–700 °C) in 1% H2 99% N2
reducing atmosphere. The resulting alloy and silicide particles formed
by film dewetting and film reaction with the substrate were
distinguished by selective wet etching and examined by scanning electron
microscopy and spectroscopy. After potassium hydroxide etch, regions
that etch slower than silicon substrate have distribution statistics
similar to the alloy and silicide particles prior to their removal,
indicating strong coupling between mass transport across the interface
and along the surface.
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M:\Arxiv\AR17\SEM_new\CuNi_12_36b |
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CuNi_12_36b_annealed_norm_m01.tif |
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CuNi_12_36b_annealed_norm_m01.tif |
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CuNi_12_36b_annealed_norm_m01.tif |
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CuNi_12_36b_annealed_norm_m01.tif |
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CuNi_12_36b_annealed_norm_m01.tif |
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CuNi_12_36b_annealed_norm_m01.tif |
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CuNi_12_36b_annealed_norm_m01.tif |
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CuNi_12_36b_annealed_norm_m01.tif |
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CuNi_12_36b_annealed_norm_m01.tif |
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